BSB015N04NX3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSB015N04NX3G
Marking Code: 0204'
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 107
nC
trⓘ - Rise Time: 6.4
nS
Cossⓘ -
Output Capacitance: 2300
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0015
Ohm
Package: WDSON2
BSB015N04NX3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSB015N04NX3G
Datasheet (PDF)
..1. Size:1566K infineon
bsb015n04nx3g.pdf
n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make
9.1. Size:548K infineon
bsb019n03lx.pdf
& " + $ !#& '$>EFeatures 0 VDST +5 9E88 C?4G
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bsb017n03lx3 bsb017n03lx3g.pdf
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9.3. Size:1557K infineon
bsb014n04lx3g.pdf
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9.4. Size:1460K infineon
bsb012ne2lxi.pdf
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bsb012ne2lx.pdf
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9.7. Size:563K infineon
bsb013ne2lxi.pdf
BSB013NE2LXIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized SyncFET for high performance Buck converterRDS(on),max 1.3 mW Integrated monolithic Schottky like diode ID 163 A Low profile (
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BSB012N03LX3 G OptiMOSTM3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for high switching frequency DC/DC converterR 1.2mDS(on),max Very low on-resistance RDS(on)I 180 AD Excellent gate charge x R product (FOM)DS(on)MG-WDSON-2 Low parasitic inductance Low profile (
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