All MOSFET. BSC014N03MSG Datasheet

 

BSC014N03MSG Datasheet and Replacement


   Type Designator: BSC014N03MSG
   Marking Code: 014N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 130 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 2600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: TDSON8
      - MOSFET Cross-Reference Search

 

BSC014N03MSG Datasheet (PDF)

 ..1. Size:540K  infineon
bsc014n03msg.pdf pdf_icon

BSC014N03MSG

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 3.1. Size:194K  infineon
bsc014n03ms.pdf pdf_icon

BSC014N03MSG

BSC014N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 1.4mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 1.75GS 100% avalanche testedI 100 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R prod

 5.1. Size:700K  infineon
bsc014n03ls .pdf pdf_icon

BSC014N03MSG

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 5.2. Size:463K  infineon
bsc014n03ls.pdf pdf_icon

BSC014N03MSG

BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 20N03L-TO252 | 2N6762JTXV

Keywords - BSC014N03MSG MOSFET datasheet

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