BSC020N025SG PDF and Equivalents Search

 

BSC020N025SG Specs and Replacement

Type Designator: BSC020N025SG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 2360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TDSON8

BSC020N025SG substitution

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BSC020N025SG datasheet

 3.1. Size:633K  infineon
 bsc020n025s.pdf pdf_icon

BSC020N025SG

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 6.1. Size:385K  infineon
 bsc020n03ls.pdf pdf_icon

BSC020N025SG

BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

 6.2. Size:679K  infineon
 bsc020n03ls .pdf pdf_icon

BSC020N025SG

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 6.3. Size:452K  infineon
 bsc020n03ms.pdf pdf_icon

BSC020N025SG

BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product... See More ⇒

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Detailed specifications: BSC016N03LSG, BSC016N03MSG, BSC016N04LSG, BSC017N04NSG, BSC018N04LSG, BSC018NE2LS, BSC019N02KSG, BSC019N04NSG, IRF530, BSC020N03LSG, BSC020N03MSG, BSC022N03SG, BSC024NE2LS, BSC025N03LSG, BSC025N03MSG, BSC026N02KSG, BSC027N04LSG

Keywords - BSC020N025SG MOSFET specs

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