BSC025N03MSG
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC025N03MSG
Marking Code: 025N03MS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 23
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 74
nC
trⓘ - Rise Time: 11
nS
Cossⓘ -
Output Capacitance: 1600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025
Ohm
Package:
TDSON8
BSC025N03MSG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC025N03MSG
Datasheet (PDF)
..1. Size:542K infineon
bsc025n03msg.pdf 
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3.1. Size:194K infineon
bsc025n03ms.pdf
BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (
5.1. Size:382K infineon
bsc025n03ls.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
5.2. Size:384K infineon
bsc025n03lsg.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
5.3. Size:685K infineon
bsc025n03ls .pdf
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