All MOSFET. BSC026N02KSG Datasheet

 

BSC026N02KSG Datasheet and Replacement


   Type Designator: BSC026N02KSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TDSON8
 

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BSC026N02KSG Datasheet (PDF)

 ..1. Size:662K  infineon
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BSC026N02KSG

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 3.1. Size:659K  infineon
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BSC026N02KSG

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 6.1. Size:1182K  infineon
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BSC026N02KSG

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5SuperSO81 Description5867Features7685 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t

 6.2. Size:586K  infineon
 bsc026n04ls.pdf pdf_icon

BSC026N02KSG

BSC026N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-

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Datasheet: BSC019N04NSG , BSC020N025SG , BSC020N03LSG , BSC020N03MSG , BSC022N03SG , BSC024NE2LS , BSC025N03LSG , BSC025N03MSG , P60NF06 , BSC027N04LSG , BSC028N06LS3G , BSC030N03LSG , BSC030N03MSG , BSC030N04NSG , BSC030P03NS3G , BSC031N06NS3G , BSC032N03SG .

History: IPD14N06S2-80 | 2SK2639-01 | IPD15N06S2L-64 | IXFT80N08 | PMPB10XNE | LNE12N60 | 2SK1512-01

Keywords - BSC026N02KSG MOSFET datasheet

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