BSC026N02KSG MOSFET Datasheet: N-Ch, 20V, 25A. Full specification with pinout and replacement list

BSC026N02KSG Specs and Replacement

Type Designator: BSC026N02KSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TDSON8

BSC026N02KSG substitution

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BSC026N02KSG datasheet

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t... See More ⇒

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BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-... See More ⇒

Detailed specifications: BSC019N04NSG, BSC020N025SG, BSC020N03LSG, BSC020N03MSG, BSC022N03SG, BSC024NE2LS, BSC025N03LSG, BSC025N03MSG, AO4407, BSC027N04LSG, BSC028N06LS3G, BSC030N03LSG, BSC030N03MSG, BSC030N04NSG, BSC030P03NS3G, BSC031N06NS3G, BSC032N03SG