APT5010JVR Specs and Replacement

Type Designator: APT5010JVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1000 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT227

APT5010JVR substitution

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APT5010JVR datasheet

 ..1. Size:71K  apt
 apt5010jvr.pdf pdf_icon

APT5010JVR

APT5010JVR 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T... See More ⇒

 0.1. Size:112K  apt
 apt5010jvru3.pdf pdf_icon

APT5010JVR

APT5010JVRU3 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan... See More ⇒

 0.2. Size:111K  apt
 apt5010jvru2.pdf pdf_icon

APT5010JVR

APT5010JVRU2 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan... See More ⇒

 5.1. Size:73K  apt
 apt5010jvfr.pdf pdf_icon

APT5010JVR

APT5010JVFR 500V 44A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Fast Recovery Body Diode ... See More ⇒

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Detailed specifications: APT40M70JVR, APT40M70LVR, APT40M75JN, APT40M82WVR, APT5010B2VFR, APT5010B2VR, APT5010JN, APT5010JVFR, K3569, APT5010LVFR, APT5010LVR, APT5012WVR, APT5014B2VR, APT5014LVR, APT5015BVR, APT5017BVFR, APT5017BVR

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