BSC059N03SG Datasheet and Replacement
Type Designator: BSC059N03SG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 720 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TDSON8
BSC059N03SG substitution
BSC059N03SG Datasheet (PDF)
bsc059n03s.pdf

BSC059N03SOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5m DS(on),max Optimized technology for notebook DC/DC convertersI 50 AD Qualified according to JEDEC1 for target applications N-channel Logic levelP-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc059n04ls6.pdf

BSC059N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2
bsc059n04lsg.pdf

BSC059N04LS GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 40 V Fast switching MOSFET for SMPSRDS(on),max 5.9 mW Optimized technology for DC/DC convertersID 73 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S
Datasheet: BSC050N04LSG , BSC050NE2LS , BSC052N03LS , BSC052N03SG , BSC054N04NSG , BSC057N03LSG , BSC057N03MSG , BSC057N08NS3G , STP65NF06 , BSC059N04LSG , BSC060N10NS3G , BSC060P03NS3EG , BSC067N06LS3G , BSC070N10NS3G , BSC072N03LDG , BSC076N06NS3G , BSC077N12NS3G .
History: SPU07N60C3 | F5020-S
Keywords - BSC059N03SG MOSFET datasheet
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History: SPU07N60C3 | F5020-S



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