BSC059N04LSG Datasheet. Specs and Replacement

Type Designator: BSC059N04LSG  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TDSON8

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BSC059N04LSG datasheet

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BSC059N04LSG

BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.9 mW Optimized technology for DC/DC converters ID 73 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S... See More ⇒

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BSC059N04LSG

BSC059N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2 ... See More ⇒

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BSC059N04LSG

% ! % D # A0... See More ⇒

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BSC059N04LSG

BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for notebook DC/DC converters I 50 A D Qualified according to JEDEC1 for target applications N-channel Logic level P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)... See More ⇒

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Detailed specifications: BSC050NE2LS, BSC052N03LS, BSC052N03SG, BSC054N04NSG, BSC057N03LSG, BSC057N03MSG, BSC057N08NS3G, BSC059N03SG, IRF830, BSC060N10NS3G, BSC060P03NS3EG, BSC067N06LS3G, BSC070N10NS3G, BSC072N03LDG, BSC076N06NS3G, BSC077N12NS3G, BSC079N10NSG

Keywords - BSC059N04LSG MOSFET specs

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