BSC060N10NS3G Specs and Replacement
Type Designator: BSC060N10NS3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 650 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TDSON8
BSC060N10NS3G substitution
- MOSFET ⓘ Cross-Reference Search
BSC060N10NS3G datasheet
bsc060n10ns3 bsc060n10ns3g.pdf
% ! !% TM # A0 D Q ' 381>>5?B=1... See More ⇒
bsc060p03ns3eg.pdf
& $ "& '! $ $;B1= '=- >5>?;= $=;0@/? &@99-=D V Features DS 6.0 m Q C ?8=6 ) 92??6= ? ,EA6B,( DS(on) max 1) Q * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C 100 A D Q T @A6B2D ?8 D6>A6B2DEB6 PG TDSON 8 Q F2=2?496 B2D65 Q . CA64 2==I CE D65 7@B ?@D63@@A= 2?D Q 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 Q "2=... See More ⇒
bsc067n06ls3.pdf
pe % ! % TM # %?88,A= 2?E 1) R + F2= 7 65 244@C5 ?8... See More ⇒
bsc067n06ls3g.pdf
Type BSC067N06LS3 G Product Summary OptiMOSTM3 Power-Transistor Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 6.7 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes... See More ⇒
Detailed specifications: BSC052N03LS, BSC052N03SG, BSC054N04NSG, BSC057N03LSG, BSC057N03MSG, BSC057N08NS3G, BSC059N03SG, BSC059N04LSG, IRLB3034, BSC060P03NS3EG, BSC067N06LS3G, BSC070N10NS3G, BSC072N03LDG, BSC076N06NS3G, BSC077N12NS3G, BSC079N10NSG, BSC080N03LSG
Keywords - BSC060N10NS3G MOSFET specs
BSC060N10NS3G cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: BSC042NE7NS3G
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