All MOSFET. BSC067N06LS3G Datasheet

 

BSC067N06LS3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC067N06LS3G
   Marking Code: 067N06LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 51 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
   Package: TDSON8

 BSC067N06LS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC067N06LS3G Datasheet (PDF)

 ..1. Size:456K  infineon
 bsc067n06ls3g.pdf

BSC067N06LS3G BSC067N06LS3G

TypeBSC067N06LS3 GProduct Summary OptiMOSTM3 Power-TransistorFeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 6.7 mW Optimized technology for DC/DC convertersID 50 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superior thermal resistance N-channel, logic level 100% avalanche tes

 2.1. Size:592K  infineon
 bsc067n06ls3.pdf

BSC067N06LS3G BSC067N06LS3G

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 9.1. Size:539K  infineon
 bsc060p03ns3eg.pdf

BSC067N06LS3G BSC067N06LS3G

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 9.2. Size:658K  infineon
 bsc060n10ns3 bsc060n10ns3g.pdf

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 9.3. Size:400K  infineon
 bsc066n06ns.pdf

BSC067N06LS3G BSC067N06LS3G

TypeBSC066N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS V 60 100% avalanche tested6.6 RDS(on),max mW Superior thermal resistanceID 64 A N-channelQOSS nC 19 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 17 Pb-free lead plating; RoHS compliant

 9.4. Size:1307K  infineon
 bsc065n06ls5.pdf

BSC067N06LS3G BSC067N06LS3G

BSC065N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according t

 9.5. Size:1173K  infineon
 bsc061n08ns5.pdf

BSC067N06LS3G BSC067N06LS3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC061N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IRL3103D1

 

 
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