BSC072N03LDG Datasheet and Replacement
Type Designator: BSC072N03LDG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 920 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TDSON8
BSC072N03LDG substitution
BSC072N03LDG Datasheet (PDF)
bsc072n03ld.pdf

BSC072N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 7.2mDS(on),maxI 20 A Fast switching MOSFETs for SMPS DPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
bsc072n04ld.pdf

BSC072N04LDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 40 V8 17Features 26354 Dual N-channel, logic level Fast switching MOSFETs for SMPS Optimized technology for Synchronous Rectification Pb-free plating; RoHS compliant182 7 100% Avalanche tested3 654 Halogen-free according to IEC61249-2-21 Superior thermal resistanceProduct Va
bsc072n08ns5.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC072N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
Datasheet: BSC057N03MSG , BSC057N08NS3G , BSC059N03SG , BSC059N04LSG , BSC060N10NS3G , BSC060P03NS3EG , BSC067N06LS3G , BSC070N10NS3G , IRF9640 , BSC076N06NS3G , BSC077N12NS3G , BSC079N10NSG , BSC080N03LSG , BSC080N03MSG , BSC080P03LSG , BSC082N10LSG , BSC084P03NS3G .
History: IPB45N04S4L-08 | 2SK3572
Keywords - BSC072N03LDG MOSFET datasheet
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History: IPB45N04S4L-08 | 2SK3572



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