BSC090N03LSG Specs and Replacement
Type Designator: BSC090N03LSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ -
Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TDSON8
BSC090N03LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC090N03LSG datasheet
..1. Size:521K infineon
bsc090n03lsg.pdf 
BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒
3.1. Size:686K infineon
bsc090n03ls.pdf 
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5.1. Size:680K infineon
bsc090n03msg.pdf 
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8.1. Size:816K infineon
bsc0902ns.pdf 
BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 ... See More ⇒
8.2. Size:1609K infineon
bsc0901ns bsc0901ns .pdf 
n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒
8.3. Size:791K infineon
bsc0904nsi.pdf 
BSC0904NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 3.7 mW Integrated monolithic Schottky-like diode ID 78 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 12 nC 100% avalanche tested QG(0V..10V) 17 nC Superior thermal resistance N-channel Qualified accordin... See More ⇒
8.4. Size:1526K infineon
bsc0906ns.pdf 
n-Channel Power MOSFET OptiMOS BSC0906NS Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0906NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒
8.5. Size:658K infineon
bsc0902nsi.pdf 
BSC0902NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2.8 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 17 nC 100% avalanche tested QG(0V..10V) 24 nC Superior thermal resistance N-channel Qualified accordi... See More ⇒
8.6. Size:1630K infineon
bsc0908ns rev3.2.pdf 
n-Channel Power MOSFET OptiMOS BSC0908NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0908NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒
8.7. Size:580K infineon
bsc0901nsi.pdf 
BSC0901NSI OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized SyncFET for high performance buck converter RDS(on),max 2 mW Integrated monolithic Schottky-like diode ID 100 A Very low on-resistance R @ V =4.5 V DS(on) GS QOSS 28 nC 100% avalanche tested QG(0V..10V) 41 nC Superior thermal resistance N-channel Qualified according to JEDE... See More ⇒
8.8. Size:608K infineon
bsc0909ns.pdf 
BSC0909NS OptiMOS Power-MOSFET Product Summary Features VDS 34 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 9.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 11.8 100% Avalanche tested ID 44 A Improved switching behaviour PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate c... See More ⇒
8.9. Size:1638K infineon
bsc0909ns rev3.2.pdf 
n-Channel Power MOSFET OptiMOS BSC0909NS Data Sheet 3.2, 2011-09-26 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0909NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS ... See More ⇒
Detailed specifications: BSC080P03LSG, BSC082N10LSG, BSC084P03NS3G, BSC084P03NS3EG, BSC0901NS, BSC0902NS, BSC0908NS, BSC0909NS, 20N60, BSC090N03MSG, BSC093N04LSG, BSC094N03SG, BSC100N03LSG, BSC100N03MSG, BSC100N06LS3G, BSC100N10NSFG, BSC105N10LSFG
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