BSC090N03LSG PDF and Equivalents Search

 

BSC090N03LSG Specs and Replacement

Type Designator: BSC090N03LSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TDSON8

BSC090N03LSG substitution

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BSC090N03LSG datasheet

 ..1. Size:521K  infineon
bsc090n03lsg.pdf pdf_icon

BSC090N03LSG

BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio... See More ⇒

 3.1. Size:686K  infineon
bsc090n03ls.pdf pdf_icon

BSC090N03LSG

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 5.1. Size:680K  infineon
bsc090n03msg.pdf pdf_icon

BSC090N03LSG

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 8.1. Size:816K  infineon
bsc0902ns.pdf pdf_icon

BSC090N03LSG

BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8 ... See More ⇒

Detailed specifications: BSC080P03LSG, BSC082N10LSG, BSC084P03NS3G, BSC084P03NS3EG, BSC0901NS, BSC0902NS, BSC0908NS, BSC0909NS, 20N60, BSC090N03MSG, BSC093N04LSG, BSC094N03SG, BSC100N03LSG, BSC100N03MSG, BSC100N06LS3G, BSC100N10NSFG, BSC105N10LSFG

Keywords - BSC090N03LSG MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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