All MOSFET. BSC160N10NS3G Datasheet

 

BSC160N10NS3G MOSFET. Datasheet pdf. Equivalent

Type Designator: BSC160N10NS3G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 42 A

Total Gate Charge (Qg): 19 nC

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: SuperSO8

BSC160N10NS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC160N10NS3G Datasheet (PDF)

1.1. bsc160n10ns3rev2.4.pdf Size:545K _infineon

BSC160N10NS3G BSC160N10NS3G

Type BSC160N10NS3 G TM 3 Power-Transistor Product Summary VDS 100 V 9 .1)+ )7%$ &-/ $# $# # -,3%/0)-, RDS(on),max 16 m 9 # (!,,%* ,-/+ !* *%3%* ID 42 A 9 5# %**%,1 '!1% # (!/'% 5 R product (FOM) DS(on) 9 %/6 *-4 -, /%0)01!,# % R DS(on) PG-TDSON-8 9 8 -.%/!1),' 1%+ .%/!12/% 9 " &/%% *%!$ .*!1),' - # -+ .*)!,1 1) 9 2!*)&)%$ !# # -/$),' 1- for target application 9 !*-'%, &/%% !#

5.1. bsc16dn25ns3rev2.2.pdf Size:577K _infineon

BSC160N10NS3G BSC160N10NS3G

Type BSC16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V • Optimized for dc-dc conversion RDS(on),max 165 mW • N-channel, normal level ID 10.9 A • Excellent gate charge x R product (FOM) DS(on) • Low on-resistance R DS(on) PG-TDSON-8 • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applicat

Datasheet: BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , BSC130P03LSG , BSC150N03LDG , BSC152N10NSFG , BSC159N10LSFG , IRF730 , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG , BSC200P03LSG , BSC205N10LSG , BSC22DN20NS3G , BSC240N12NS3G .

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