APT5015BVR Specs and Replacement

Type Designator: APT5015BVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO247

APT5015BVR substitution

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APT5015BVR datasheet

 ..1. Size:60K  apt
 apt5015bvr.pdf pdf_icon

APT5015BVR

APT5015BVR 500V 32A 0.150 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

 ..2. Size:375K  inchange semiconductor
 apt5015bvr.pdf pdf_icon

APT5015BVR

isc N-Channel MOSFET Transistor APT5015BVR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 5.1. Size:115K  apt
 apt5015bvfrg.pdf pdf_icon

APT5015BVR

APT5015BVFR APT5015SVFR 500V 32A 0.150 BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVFR also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 5.2. Size:375K  inchange semiconductor
 apt5015bvfr.pdf pdf_icon

APT5015BVR

isc N-Channel MOSFET Transistor APT5015BVFR FEATURES Drain Current I =32A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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Detailed specifications: APT5010JN, APT5010JVFR, APT5010JVR, APT5010LVFR, APT5010LVR, APT5012WVR, APT5014B2VR, APT5014LVR, 13N50, APT5017BVFR, APT5017BVR, APT5017SVR, APT5019HVR, APT5020BN, APT5020BVFR, APT5020BVR, APT5020SVFR

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