All MOSFET. APT5015BVR Datasheet

 

APT5015BVR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT5015BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO247

 APT5015BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT5015BVR Datasheet (PDF)

 ..1. Size:60K  apt
 apt5015bvr.pdf

APT5015BVR APT5015BVR

APT5015BVR500V 32A 0.150POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 ..2. Size:375K  inchange semiconductor
 apt5015bvr.pdf

APT5015BVR APT5015BVR

isc N-Channel MOSFET Transistor APT5015BVRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 5.1. Size:115K  apt
 apt5015bvfrg.pdf

APT5015BVR APT5015BVR

APT5015BVFRAPT5015SVFR500V 32A 0.150BVFRPOWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V SVFRalso achieves faster switching speeds through optimized gate layout.

 5.2. Size:375K  inchange semiconductor
 apt5015bvfr.pdf

APT5015BVR APT5015BVR

isc N-Channel MOSFET Transistor APT5015BVFRFEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:28K  apt
 apt5015blc.pdf

APT5015BVR APT5015BVR

APT5015BLC500V 32A 0.150 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.D Lower G

Datasheet: APT5010JN , APT5010JVFR , APT5010JVR , APT5010LVFR , APT5010LVR , APT5012WVR , APT5014B2VR , APT5014LVR , IRF530 , APT5017BVFR , APT5017BVR , APT5017SVR , APT5019HVR , APT5020BN , APT5020BVFR , APT5020BVR , APT5020SVFR .

 

 
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