BSC196N10NSG Datasheet and Replacement
Type Designator: BSC196N10NSG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0196 Ohm
Package: TDSON8
BSC196N10NSG substitution
BSC196N10NSG Datasheet (PDF)
bsc190n15ns3 bsc190n15ns3g.pdf
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Datasheet: BSC130P03LSG , BSC150N03LDG , BSC152N10NSFG , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , 2SK3878 , BSC200P03LSG , BSC205N10LSG , BSC22DN20NS3G , BSC240N12NS3G , BSC252N10NSFG , BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G .
History: IRFB3077
Keywords - BSC196N10NSG MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFB3077
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