BSC205N10LSG Specs and Replacement
Type Designator: BSC205N10LSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
Package: TDSON8
BSC205N10LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC205N10LSG datasheet
bsc205n10ls8.pdf
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bsc200p03lsg .pdf
BSC200P03LS G OptiMOS -P Power-Transistor Product Summary Features VDS -30 V P-Channel RDS(on),max 20 mW Enhancement mode ID -12.5 A Logic level 150 C operating temperature Avalanche rated PG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free Lead plating RoHS compliant Type Package Mark... See More ⇒
Detailed specifications: BSC152N10NSFG, BSC159N10LSFG, BSC160N10NS3G, BSC16DN25NS3G, BSC190N12NS3G, BSC190N15NS3G, BSC196N10NSG, BSC200P03LSG, 2N7002, BSC22DN20NS3G, BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG, BSC320N20NS3G, BSC340N08NS3G, BSC360N15NS3G, BSC440N10NS3G
Keywords - BSC205N10LSG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NDB4060 | ELM53402CA | 2SK303 | SI2336DS
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