All MOSFET. BSC205N10LSG Datasheet

 

BSC205N10LSG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC205N10LSG
   Marking Code: 205N10LS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
   Package: TDSON8

 BSC205N10LSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC205N10LSG Datasheet (PDF)

 3.1. Size:658K  infineon
 bsc205n10ls8.pdf

BSC205N10LSG BSC205N10LSG

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 9.1. Size:494K  infineon
 bsc200p03lsg .pdf

BSC205N10LSG BSC205N10LSG

BSC200P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 20mW Enhancement modeID -12.5 A Logic level 150C operating temperature Avalanche ratedPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free Lead plating: RoHS compliantType Package Mark

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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