All MOSFET. BSC205N10LSG Datasheet

 

BSC205N10LSG Datasheet and Replacement


   Type Designator: BSC205N10LSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
   Package: TDSON8
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BSC205N10LSG Datasheet (PDF)

 3.1. Size:658K  infineon
 bsc205n10ls8.pdf pdf_icon

BSC205N10LSG

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 9.1. Size:494K  infineon
 bsc200p03lsg .pdf pdf_icon

BSC205N10LSG

BSC200P03LS GOptiMOS-P Power-TransistorProduct SummaryFeaturesVDS -30 V P-ChannelRDS(on),max 20mW Enhancement modeID -12.5 A Logic level 150C operating temperature Avalanche ratedPG-TDSON-8 Vgs=25V, specially suited for notebook applications Halogen-free according to IEC61249-2-21 Pb-free Lead plating: RoHS compliantType Package Mark

Datasheet: BSC152N10NSFG , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG , BSC200P03LSG , 12N60 , BSC22DN20NS3G , BSC240N12NS3G , BSC252N10NSFG , BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G , BSC360N15NS3G , BSC440N10NS3G .

History: 2SJ473-01S | IRF7759L2TR1PBF

Keywords - BSC205N10LSG MOSFET datasheet

 BSC205N10LSG cross reference
 BSC205N10LSG equivalent finder
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