BSC440N10NS3G Datasheet and Replacement
Type Designator: BSC440N10NS3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TDSON8
BSC440N10NS3G substitution
BSC440N10NS3G Datasheet (PDF)
bsc440n10ns3 bsc440n10ns3g.pdf

BSC440N10NS3 GTM 3 Power-TransistorProduct SummaryFeaturesVDS 100 V: %07 *-5 '!2% # (!0'% &-0 ()'( &0%/3%,# 7 !..*)# !2)-,1RDS(on),max 44m : .2)+ )8%$ &-0 $# $# # -,4%01)-,ID 18 A: # (!,,%* ,-0+ !* *%4%*PG-TDSON-8: 6# %**%,2 '!2% # (!0'% 6 R product (FOM)DS(on): %07 *-5 -, 0%1)12!,# % RDS(on): 9 -.%0!2),' 2%+ .%0!230%: " &0%% *%!$ .*!2),' - # -+ .*)!,21):
Datasheet: BSC205N10LSG , BSC22DN20NS3G , BSC240N12NS3G , BSC252N10NSFG , BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G , BSC360N15NS3G , IRF9540N , BSC520N15NS3G , BSC600N25NS3G , BSC750N10NDG , BSC900N20NS3G , BSD223P , BSD314SPE , BSF024N03LT3G , BSF050N03LQ3G .
History: HY3003P | BSC010N04LSI | AP2N050H | 4N65KG-T2Q-R | SSM5N03FE | IRFP264N | PJM3401PSC
Keywords - BSC440N10NS3G MOSFET datasheet
BSC440N10NS3G cross reference
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History: HY3003P | BSC010N04LSI | AP2N050H | 4N65KG-T2Q-R | SSM5N03FE | IRFP264N | PJM3401PSC



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