All MOSFET. BSC600N25NS3G Datasheet

 

BSC600N25NS3G Datasheet and Replacement


   Type Designator: BSC600N25NS3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 112 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TDSON8
 

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BSC600N25NS3G Datasheet (PDF)

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BSC600N25NS3G

BSC600N25NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 250 V N-channel, normal levelRDS(on),max 60mW Excellent gate charge x R product (FOM)DS(on)ID 25 A Very low on-resistance RDS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-

Datasheet: BSC240N12NS3G , BSC252N10NSFG , BSC265N10LSFG , BSC320N20NS3G , BSC340N08NS3G , BSC360N15NS3G , BSC440N10NS3G , BSC520N15NS3G , IRFB3607 , BSC750N10NDG , BSC900N20NS3G , BSD223P , BSD314SPE , BSF024N03LT3G , BSF050N03LQ3G , BSF053N03LTG , BSF083N03LQG .

History: IPS50R520CP | 2SK1988 | MTD3055VL

Keywords - BSC600N25NS3G MOSFET datasheet

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