BSC600N25NS3G PDF and Equivalents Search

 

BSC600N25NS3G Specs and Replacement

Type Designator: BSC600N25NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TDSON8

BSC600N25NS3G substitution

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BSC600N25NS3G datasheet

 ..1. Size:484K  infineon
 bsc600n25ns3g.pdf pdf_icon

BSC600N25NS3G

BSC600N25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V N-channel, normal level RDS(on),max 60 mW Excellent gate charge x R product (FOM) DS(on) ID 25 A Very low on-resistance R DS(on) Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-... See More ⇒

Detailed specifications: BSC240N12NS3G, BSC252N10NSFG, BSC265N10LSFG, BSC320N20NS3G, BSC340N08NS3G, BSC360N15NS3G, BSC440N10NS3G, BSC520N15NS3G, K4145, BSC750N10NDG, BSC900N20NS3G, BSD223P, BSD314SPE, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, BSF083N03LQG

Keywords - BSC600N25NS3G MOSFET specs

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