BSD314SPE Datasheet and Replacement
Type Designator: BSD314SPE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 126 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT363
- MOSFET Cross-Reference Search
BSD314SPE Datasheet (PDF)
bsd314spe.pdf

BSD314SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =-10 V 140mDS(on),max GS Enhancement modeV =-4.5 V 230GS Logic level (4.5V rated)I -1.5 AD ESD protectedPG-SOT-363 Qualified according AEC Q101654 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123Type Pac
bsd316sn.pdf

BSD316SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-21123Type Package
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MTB070P15J3 | AP30H80Q | R6006JND3 | 1N70Z | WNM12N65F | BSC060P03NS3EG | PDP0959
Keywords - BSD314SPE MOSFET datasheet
BSD314SPE cross reference
BSD314SPE equivalent finder
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History: MTB070P15J3 | AP30H80Q | R6006JND3 | 1N70Z | WNM12N65F | BSC060P03NS3EG | PDP0959



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