All MOSFET. BSD314SPE Datasheet

 

BSD314SPE Datasheet and Replacement


   Type Designator: BSD314SPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.9 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT363
 

 BSD314SPE substitution

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BSD314SPE Datasheet (PDF)

 ..1. Size:154K  infineon
 bsd314spe.pdf pdf_icon

BSD314SPE

BSD314SPEOptiMOS-P 3 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =-10 V 140mDS(on),max GS Enhancement modeV =-4.5 V 230GS Logic level (4.5V rated)I -1.5 AD ESD protectedPG-SOT-363 Qualified according AEC Q101654 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21123Type Pac

 9.1. Size:183K  infineon
 bsd316sn.pdf pdf_icon

BSD314SPE

BSD316SNOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 160mDS(on),max GS Enhancement modeV =4.5 V 280GS Logic level (4.5V rated)I 1.4 AD Avalanche rated Qualified according to AEC Q101PG-SOT363 100% lead-free; RoHS compliant6 5 4 Halogen-free according to IEC61249-2-21123Type Package

Datasheet: BSC340N08NS3G , BSC360N15NS3G , BSC440N10NS3G , BSC520N15NS3G , BSC600N25NS3G , BSC750N10NDG , BSC900N20NS3G , BSD223P , 4435 , BSF024N03LT3G , BSF050N03LQ3G , BSF053N03LTG , BSF083N03LQG , BSL207SP , BSL211SP , BSL215P , BSL307SP .

History: TSF10N60M | WST4045 | BSD223P | HM2N20PR | IXUC100N055 | SI6435ADQ-T1 | PS8205B

Keywords - BSD314SPE MOSFET datasheet

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