BSD314SPE Specs and Replacement
Type Designator: BSD314SPE
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.9 nS
Cossⓘ - Output Capacitance: 126 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT363
BSD314SPE substitution
- MOSFET ⓘ Cross-Reference Search
BSD314SPE datasheet
bsd314spe.pdf
BSD314SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =-10 V 140 m DS(on),max GS Enhancement mode V =-4.5 V 230 GS Logic level (4.5V rated) I -1.5 A D ESD protected PG-SOT-363 Qualified according AEC Q101 6 5 4 100% Lead-free; RoHS compliant Halogen-free according to IEC61249-2-21 1 2 3 Type Pac... See More ⇒
bsd316sn.pdf
BSD316SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 160 m DS(on),max GS Enhancement mode V =4.5 V 280 GS Logic level (4.5V rated) I 1.4 A D Avalanche rated Qualified according to AEC Q101 PG-SOT363 100% lead-free; RoHS compliant 6 5 4 Halogen-free according to IEC61249-2-21 1 2 3 Type Package ... See More ⇒
Detailed specifications: BSC340N08NS3G, BSC360N15NS3G, BSC440N10NS3G, BSC520N15NS3G, BSC600N25NS3G, BSC750N10NDG, BSC900N20NS3G, BSD223P, 5N65, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, BSF083N03LQG, BSL207SP, BSL211SP, BSL215P, BSL307SP
Keywords - BSD314SPE MOSFET specs
BSD314SPE cross reference
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