All MOSFET. BSF053N03LTG Datasheet

 

BSF053N03LTG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSF053N03LTG
   Marking Code: 3003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: WDSON2

 BSF053N03LTG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSF053N03LTG Datasheet (PDF)

 3.1. Size:563K  infineon
bsf053n03lt g.pdf

BSF053N03LTG
BSF053N03LTG

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 9.1. Size:1520K  infineon
bsf050n03lq3g.pdf

BSF053N03LTG
BSF053N03LTG

n-Channel Power MOSFETOptiMOSBSF050N03LQ3 G Data Sheet2.2, 2009-05-11Final Industrial & MultimarketOptiMOS Power-MOSFETBSF050N03LQ3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

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