APT5017BVR Specs and Replacement

Type Designator: APT5017BVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 370 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO247

APT5017BVR substitution

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APT5017BVR datasheet

 ..1. Size:60K  apt
 apt5017bvr.pdf pdf_icon

APT5017BVR

APT5017BVR 500V 30A 0.170 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower ... See More ⇒

 ..2. Size:375K  inchange semiconductor
 apt5017bvr.pdf pdf_icon

APT5017BVR

isc N-Channel MOSFET Transistor APT5017BVR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 5.1. Size:62K  apt
 apt5017bvfr.pdf pdf_icon

APT5017BVR

APT5017BVFR 500V 30A 0.170 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test... See More ⇒

 5.2. Size:375K  inchange semiconductor
 apt5017bvfr.pdf pdf_icon

APT5017BVR

isc N-Channel MOSFET Transistor APT5017BVFR FEATURES Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.17 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

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Detailed specifications: APT5010JVR, APT5010LVFR, APT5010LVR, APT5012WVR, APT5014B2VR, APT5014LVR, APT5015BVR, APT5017BVFR, 12N60, APT5017SVR, APT5019HVR, APT5020BN, APT5020BVFR, APT5020BVR, APT5020SVFR, APT5020SVR, APT5022AVR

Keywords - APT5017BVR MOSFET specs

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