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APT5017BVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT5017BVR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 200 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT5017BVR

 

 

APT5017BVR Datasheet (PDF)

 ..1. Size:60K  apt
 apt5017bvr.pdf

APT5017BVR APT5017BVR

APT5017BVR500V 30A 0.170POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 ..2. Size:375K  inchange semiconductor
 apt5017bvr.pdf

APT5017BVR APT5017BVR

isc N-Channel MOSFET Transistor APT5017BVRFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 5.1. Size:62K  apt
 apt5017bvfr.pdf

APT5017BVR APT5017BVR

APT5017BVFR500V 30A 0.170POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test

 5.2. Size:375K  inchange semiconductor
 apt5017bvfr.pdf

APT5017BVR APT5017BVR

isc N-Channel MOSFET Transistor APT5017BVFRFEATURESDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.1. Size:34K  apt
 apt5017blc.pdf

APT5017BVR APT5017BVR

APT5017BLCAPT5017SLC500V 30A 0.170WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast switc

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