BSF083N03LQG Specs and Replacement
Type Designator: BSF083N03LQG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 430 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
Package: WDSON2
BSF083N03LQG substitution
- MOSFET ⓘ Cross-Reference Search
BSF083N03LQG datasheet
bsf083n03lq g.pdf
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Detailed specifications: BSC600N25NS3G, BSC750N10NDG, BSC900N20NS3G, BSD223P, BSD314SPE, BSF024N03LT3G, BSF050N03LQ3G, BSF053N03LTG, IRF530, BSL207SP, BSL211SP, BSL215P, BSL307SP, BSL308PE, BSL314PE, BSL315P, BSO604NS2
Keywords - BSF083N03LQG MOSFET specs
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