All MOSFET. BSL215P Datasheet

 

BSL215P Datasheet and Replacement


   Type Designator: BSL215P
   Marking Code: sPG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 3.55 nC
   tr ⓘ - Rise Time: 9.7 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TSOP6
 

 BSL215P substitution

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BSL215P Datasheet (PDF)

 ..1. Size:419K  infineon
 bsl215p.pdf pdf_icon

BSL215P

BSL215P#

 8.1. Size:405K  infineon
 bsl215c.pdf pdf_icon

BSL215P

BSL215COptiMOS2 + OptiMOS-P 2 Small Signal TransistorProduct Summary FeaturesP N Complementary P + N channel VDS -20 20 V Enhancement modeRDS(on),max VGS=4.5 V 150 140 mW Super Logic level (2.5V rated)VGS=2.5 V 280 250 Avalanche ratedID -1.5 1.5 A Qualified according to AEC Q101 100% lead-free; RoHS compliantPG-TSOP6 Halogen free a

 9.1. Size:413K  infineon
 bsl214n.pdf pdf_icon

BSL215P

BSL214NOptiMOS ':.99 '64;.9 (>.;?6?@%>EFeatures 20 VDST H5@ ) 7

 9.2. Size:348K  infineon
 bsl211sp.pdf pdf_icon

BSL215P

Rev 2.0BSL211SPOptiMOS-P Small-Signal-TransistorProduct SummaryFeatureVDS -20 V P-ChannelRDS(on) 67 m Enhancement modeID -4.7 A Super Logic Level (2.5 V rated)P-TSOP6-6 150C operating temperature Avalanche rated dv/dt rated4352 Pb-free lead plating; RoHS compliant61QualifiedaccordingtoAECQ101

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Datasheet: BSD223P , BSD314SPE , BSF024N03LT3G , BSF050N03LQ3G , BSF053N03LTG , BSF083N03LQG , BSL207SP , BSL211SP , IRFP250 , BSL307SP , BSL308PE , BSL314PE , BSL315P , BSO604NS2 , BSO033N03MSG , BSO040N03MSG , BSO051N03MSG .

Keywords - BSL215P MOSFET datasheet

 BSL215P cross reference
 BSL215P equivalent finder
 BSL215P lookup
 BSL215P substitution
 BSL215P replacement

 

 
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