All MOSFET. BSO033N03MSG Datasheet

 

BSO033N03MSG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSO033N03MSG
   Marking Code: 033N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 12.8 nS
   Cossⓘ - Output Capacitance: 1900 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: SO8

 BSO033N03MSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSO033N03MSG Datasheet (PDF)

 ..1. Size:329K  infineon
bso033n03msg.pdf

BSO033N03MSG
BSO033N03MSG

BSO033N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 3.3mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 3.8GS 100% Avalanche testedI 22 AD N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)PG-

 3.1. Size:662K  infineon
bso033n03ms.pdf

BSO033N03MSG
BSO033N03MSG

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