BSO072N03S Specs and Replacement
Type Designator: BSO072N03S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.4 nS
Cossⓘ - Output Capacitance: 865 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: SO8
BSO072N03S substitution
- MOSFET ⓘ Cross-Reference Search
BSO072N03S datasheet
bso072n03s g.pdf
BSO072N03S C "9@/; %;+877+;B Features V DS Q 2CD CG D49 ?8 ') - . 7@B -'*- m DS(on) max Q ) AD > J65 D649?@=@8I 7@B ?@D63@@2= B6C CD2?46 Q F2=2?496 B... See More ⇒
bso072n03s.pdf
BSO072N03S www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒
Detailed specifications: BSL315P, BSO604NS2, BSO033N03MSG, BSO040N03MSG, BSO051N03MSG, BSO052N03S, BSO064N03S, BSO065N03MSG, RFP50N06, BSO080P03NS3G, BSO080P03NS3EG, BSO080P03SH, BSO083N03MSG, BSO094N03S, BSO110N03MSG, BSO119N03S, BSO130N03MSG
Keywords - BSO072N03S MOSFET specs
BSO072N03S cross reference
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