All MOSFET. BSO083N03MSG Datasheet

 

BSO083N03MSG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSO083N03MSG
   Marking Code: 083N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0083 Ohm
   Package: SO8

 BSO083N03MSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSO083N03MSG Datasheet (PDF)

 3.1. Size:672K  infineon
 bso083n03ms.pdf

BSO083N03MSG BSO083N03MSG

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 9.1. Size:323K  infineon
 bso080p03s1.pdf

BSO083N03MSG BSO083N03MSG

BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8mDS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Halo

 9.2. Size:673K  infineon
 bso080p03ns3e g.pdf

BSO083N03MSG BSO083N03MSG

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 mWDS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8

 9.3. Size:308K  infineon
 bso080p03sh.pdf

BSO083N03MSG BSO083N03MSG

BSO080P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 8m DS(on),max Enhancement modeI -14.9 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking lead free Haloge

 9.4. Size:652K  infineon
 bso080p03ns3 g 2.2.pdf

BSO083N03MSG BSO083N03MSG

'$ % #' % % (>.;?6?@%>EFeatures 0 VDSQ C:?8=6 ) 92??6= :? ,( . 8.0 m DS(on) max GS1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C . 11.4GSQ T @A6B2D:?8 D6>A6B2DEB6 14.8 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ 2AA=:42D:@?C 32DD6BI >2?286>6?D =@25 CG:D49:?8Q "2=@86? 7B66

 9.5. Size:533K  infineon
 bso080p03ns3g.pdf

BSO083N03MSG BSO083N03MSG

BSO080P03NS3 GOptiMOS3 P3-Power-TransistorProduct SummaryFeaturesVDS -30 V single P-Channel in SO8RDS(on),max VGS=-10 V 8.0mW Qualified according JEDEC1) for target applicationsVGS=-6 V 11.4 150C operating temperatureID -14.8 A V =25 V, specially suited for notebook applicationsGS Pb-free plating; RoHS compliantPG-DSO-8 applications: batter

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