BSO130N03MSG Specs and Replacement
Type Designator: BSO130N03MSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 340 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SO8
BSO130N03MSG substitution
- MOSFET ⓘ Cross-Reference Search
BSO130N03MSG datasheet
bso130n03ms.pdf
%" ! % %0 S 07DK >AI A@ D7E;EF3@57 0 D n) G S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( G D O D n) S , G3>;8;76 8AD 5A@EG?7D >7H7> 3BB>;53F;A@ S +4 8D77 B>3F;@9 - A#.... See More ⇒
bso130p03s.pdf
BSO130P03S OptiMOSTM-P Power-Transistor Product Summary Features V -30 V DS P-Channel R 13 m DS(on),max Enhancement mode I -11.3 A D Logic level 150 C operating temperature Avalanche rated P-DSO-8 dv /dt rated Ideal for fast switching buck converter Type Package Marking BSO130P03S P-DSO-8 130P3S Maximum ratings, at T =25 C, unless otherwise... See More ⇒
bso130p03sh.pdf
BSO130P03S H OptiMOS -P Small-Signal-Transistor Product Summary Features V -30 V DS P-Channel R 13 m DS(on),max Enhancement mode I -11.7 A D Logic level PG-DSO-8 150 C operating temperature qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Marking Lead fr... See More ⇒
Detailed specifications: BSO072N03S, BSO080P03NS3G, BSO080P03NS3EG, BSO080P03SH, BSO083N03MSG, BSO094N03S, BSO110N03MSG, BSO119N03S, IRFZ24N, BSO130P03S, BSO130P03SH, BSO150N03, BSO150N03MDG, BSO200N03, BSO200N03S, BSO200P03SH, BSO201SPH
Keywords - BSO130N03MSG MOSFET specs
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