All MOSFET. APT5020BVR Datasheet

 

APT5020BVR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT5020BVR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 26 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 510 pF

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO247

APT5020BVR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

APT5020BVR Datasheet (PDF)

1.1. apt5020bvr.pdf Size:59K _apt

APT5020BVR
APT5020BVR

APT5020BVR 500V 26A 0.200Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower L

1.2. apt5020bvfr.pdf Size:61K _apt

APT5020BVR
APT5020BVR

APT5020BVFR 500V 26A 0.200Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Test

 2.1. apt5020bn.pdf Size:51K _apt

APT5020BVR
APT5020BVR

D TO-247 G APT5020BN 500V 28.0A 0.20Ω S APT5022BN 500V 27.0A 0.22Ω POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. APT APT Symbol Parameter 5020BN 5022BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25°C 28 27 Amps IDM Pulsed Drain Current 1 112 108

2.2. apt5020blc.pdf Size:34K _apt

APT5020BVR
APT5020BVR

APT5020BLC APT5020SLC 500V 26A 0.200W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast switc

Datasheet: APT5014LVR , APT5015BVR , APT5017BVFR , APT5017BVR , APT5017SVR , APT5019HVR , APT5020BN , APT5020BVFR , STP75NF75 , APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , APT5024BVFR , APT5024BVR , APT5025BN , APT5026HVR .

 
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