APT5020BVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT5020BVR
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 26 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 510 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: TO247
Аналог (замена) для APT5020BVR
APT5020BVR Datasheet (PDF)
apt5020bvr.pdf
APT5020BVR500V 26A 0.200POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L
apt5020bvr.pdf
isc N-Channel MOSFET Transistor APT5020BVRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
apt5020bvfr.pdf
APT5020BVFR500V 26A 0.200POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Test
apt5020bvfr.pdf
isc N-Channel MOSFET Transistor APT5020BVFRFEATURESDrain Current I =26A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt5020bn.pdf
DTO-247GAPT5020BN 500V 28.0A 0.20SAPT5022BN 500V 27.0A 0.22POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5020BN 5022BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C28 27AmpsIDM Pulsed Drain Current 1112 108
apt5020blc.pdf
APT5020BLCAPT5020SLC500V 26A 0.200WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast switc
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