BSS308PE Datasheet and Replacement

BSS308PE#

Product specificationBSS308PEOptiMOS P3 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS P-channelR V =-10 V 80mDS(on),max GS Enhancement modeV =-4.5 V 130GS Logic level (4.5V rated)I -2.0 AD ESD protectedPG-SOT-23 Qualified according to AEC Q1013 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21

BSS308PEwww.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS302PX20 V, 5.1 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302NX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS305PZ80 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS305NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

PBSS302PZ20 V, 5.5 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS305PX80 V, 4.0 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS305NX.1.2 Features Low collector-emitter saturation voltage VCEsat

PBSS302NZ20 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS301PD20 V, 4 A PNP low VCEsat (BISS) transistorRev. 03 17 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301ND.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS305NX80 V, 4.6 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PX.1.2 Features Low collector-emitter saturation voltage VCEsat

PBSS302NX20 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS302PD40 V, 4 A PNP low VCEsat (BISS) transistorRev. 02 6 December 2007 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS302ND.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous

PBSS301ND20 V, 4 A NPN low VCEsat (BISS) transistorRev. 03 7 September 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PD.1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS303PD60 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

PBSS301NX12 V, 5.3 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301NZ12 V, 5.8 A NPN low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS301PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS305NZ80 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS303PX30 V, 5.1 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NX.1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS302ND40 V, 4 A NPN low VCEsat (BISS) transistorRev. 02 18 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS302PD.1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

PBSS305ND100 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 7 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS305PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304PZ60 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS303ND60 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 14 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS303NX30 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 01 23 August 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PX.1.2 Features Low collector-emitter saturation voltage VCEsat

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS303NZ30 V, 5.5 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301PZ12 V, 5.7 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

www.DataSheet4U.comPBSS305PD100 V, 2 A PNP low VCEsat (BISS) transistorRev. 01 30 May 2006 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS305ND.1.2 Features Low collector-emitter saturation voltage VCEsat Hi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS306PZ100 V, 4.1 A PNP low VCEsat (BISS) transistorRev. 01 20 September 2006 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS306NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector

PBSS303PZ30 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301PX12 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 17 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS301NX.1.2 Features Low collector-emitter saturation voltage VCEsa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304PX60 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NX.1.2 Features Low collector-emitter saturation voltage VCEsat

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS306NZ100 V, 5.1 A NPN low VCEsat (BISS) transistorRev. 02 11 December 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS306PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector

BSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112Type Package Tape and Re

Product specificationBSS306NOptiMOS2 Small-Signal-TransistorProduct SummaryFeaturesV 30 VDS N-channelR V =10 V 57mDS(on),max GS Enhancement modeV =4.5 V 93GS Logic level (4.5V rated)I 2.3 AD Avalanche rated Qualified according to AEC Q101PG-SOT23 100% lead-free; RoHS compliant3 Halogen-free according to IEC61249-2-2112T

SMD Type TransistorsPNP TransistorsPBSS306PX (KBSS306PX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306NX.1.Base2.CollectorC3.EmitterBE Absolute

SMD Type TransistorsNPN TransistorsPBSS306NX (KBSS306NX)1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC0.42 0.10.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX.1.BaseC2.Collector3.EmitterBE Absolute

PBSS304SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)

PBSS304PX60V PNP LOW SATURATION MEDIUM POWER TRANSISTORSOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)