BSS308PE - описание и поиск аналогов

BSS308PE #

Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V 30 V DS P-channel R V =-10 V 80 m DS(on),max GS Enhancement mode V =-4.5 V 130 GS Logic level (4.5V rated) I -2.0 A D ESD protected PG-SOT-23 Qualified according to AEC Q101 3 100% lead-free; RoHS compliant Halogen-free according to IEC61249-2-21

BSS308PE www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-23

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS305NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

PBSS302PZ 20 V, 5.5 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS305PX 80 V, 4.0 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS305NX. 1.2 Features Low collector-emitter saturation voltage VCEsat

PBSS302NZ 20 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS301PD 20 V, 4 A PNP low VCEsat (BISS) transistor Rev. 03 17 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301ND. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS305NX 80 V, 4.6 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PX. 1.2 Features Low collector-emitter saturation voltage VCEsat

PBSS302NX 20 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS302PD 40 V, 4 A PNP low VCEsat (BISS) transistor Rev. 02 6 December 2007 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS302ND. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuous

PBSS301ND 20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 03 7 September 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PD. 1.2 Features Very low collector-emitter saturation resistance Ultra low collector-emit

PBSS304PD 80 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 24 March 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

PBSS301NX 12 V, 5.3 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS304NZ 60 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 01 18 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301NZ 12 V, 5.8 A NPN low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS301PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS305NZ 80 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS303PX 30 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

PBSS302ND 40 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02 18 February 2008 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS302PD. 1.2 Features Ultra low collector-emitter saturation voltage VCEsat 4 A continuou

PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304PZ 60 V, 4.5 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 14 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS303NX 30 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 01 23 August 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PX. 1.2 Features Low collector-emitter saturation voltage VCEsat

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

PBSS303NZ 30 V, 5.5 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301PZ 12 V, 5.7 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

www.DataSheet4U.com PBSS305PD 100 V, 2 A PNP low VCEsat (BISS) transistor Rev. 01 30 May 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS305ND. 1.2 Features Low collector-emitter saturation voltage VCEsat Hi

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 01 20 September 2006 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS306NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector

PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

PBSS301PX 12 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 17 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS301NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS304PX 60 V, 4.2 A PNP low VCEsat (BISS) transistor Rev. 02 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS304NX. 1.2 Features Low collector-emitter saturation voltage VCEsat

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PBSS306NZ 100 V, 5.1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS306PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector

BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 Type Package Tape and Re

Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 57 m DS(on),max GS Enhancement mode V =4.5 V 93 GS Logic level (4.5V rated) I 2.3 A D Avalanche rated Qualified according to AEC Q101 PG-SOT23 100% lead-free; RoHS compliant 3 Halogen-free according to IEC61249-2-21 1 2 T

SMD Type Transistors PNP Transistors PBSS306PX (KBSS306PX) 1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 0.42 0.1 0.46 0.1 High efficiency due to less heat generation Complement to PBSS306NX. 1.Base 2.Collector C 3.Emitter B E Absolute

SMD Type Transistors NPN Transistors PBSS306NX (KBSS306NX) 1.70 0.1 Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC 0.42 0.1 0.46 0.1 High efficiency due to less heat generation Complement to PBSS306PX. 1.Base C 2.Collector 3.Emitter B E Absolute

PBSS304 SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)

PBSS304PX 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR SOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)