BSZ086P03NS3EG Datasheet and Replacement

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BSZ086P03NS3 GOptiMOSTM P3 Power-TransistorProduct Summary VDS -30 V FeaturesRDS(on),max 8.6 single P-Channel in S3O8 mW Qualified according JEDEC1) for target applicationsID -40 A PG-TSDSON-8 150 C operating temperature V =25 V, specially suited for notebook applicationsGS Pb-free; RoHS compliant applications: battery management, load switchin

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS 5 Power-Transistor, 80 VBSZ084N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS 5 Power-Transistor, 80 VBSZ084N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC co

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