BSZ088N03MSG Specs and Replacement
Type Designator: BSZ088N03MSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 510 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TSDSON8
BSZ088N03MSG substitution
- MOSFET ⓘ Cross-Reference Search
BSZ088N03MSG datasheet
bsz088n03msg.pdf
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bsz088n03lsg.pdf
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bsz086p03ns3g 2.02.pdf
&+ $ "& '! $ $ '>.;?6?@ $>E V Features DS 8.6 m R C ?8=6 ) 92??6= ? , ( DS(on) max 1) 40 A R * E2= 7 65 244@B5 ?8 $ 7@B D2B86D 2AA= 42D @?C D R U @A6B2D ?8 D6>A6B2DEB6 PG TSDSON 8 R . CA64 2==I CE D65 7@B ?@D63@@A= 2?D R 2AA= 42D @?C 32DD6BI >2?286>6?D =@25 CG D49 ?8 R "2=@86? 7B66 244@B5 ?8 D@ # Type Pac... See More ⇒
bsz084n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ084N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC co... See More ⇒
Detailed specifications: BSZ050N03MSG, BSZ058N03LSG, BSZ058N03MSG, BSZ067N06LS3G, BSZ076N06NS3G, BSZ086P03NS3G, BSZ086P03NS3EG, BSZ088N03LSG, IRLB4132, BSZ0909NS, BSZ097N04LSG, BSZ100N03LSG, BSZ100N03MSG, BSZ100N06LS3G, BSZ105N04NSG, BSZ110N06NS3G, BSZ120P03NS3G
Keywords - BSZ088N03MSG MOSFET specs
BSZ088N03MSG cross reference
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BSZ088N03MSG replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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