All MOSFET. BSZ100N06LS3G Datasheet

 

BSZ100N06LS3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ100N06LS3G
   Marking Code: 100N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TSDSON8

 BSZ100N06LS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ100N06LS3G Datasheet (PDF)

 ..1. Size:467K  infineon
 bsz100n06ls3 bsz100n06ls3g.pdf

BSZ100N06LS3G BSZ100N06LS3G

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 5.1. Size:691K  infineon
 bsz100n06ns.pdf

BSZ100N06LS3G BSZ100N06LS3G

TypeBSZ100N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 10 mW Superior thermal resistanceID A 40 N-channelQOSS nC 14 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 12 Pb-free lead plating; RoHS compliantPG-TS

 6.1. Size:628K  infineon
 bsz100n03msg.pdf

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 6.2. Size:631K  infineon
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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