BSZ110N06NS3G PDF and Equivalents Search

 

BSZ110N06NS3G Specs and Replacement

Type Designator: BSZ110N06NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TSDSON8

BSZ110N06NS3G substitution

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BSZ110N06NS3G datasheet

 ..1. Size:459K  infineon
 bsz110n06ns3 bsz110n06ns3g.pdf pdf_icon

BSZ110N06NS3G

pe $) $ TM " A 03 B53 R 11 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I D Q H35>5?B=1... See More ⇒

 6.1. Size:1359K  infineon
 bsz110n08ns5.pdf pdf_icon

BSZ110N06NS3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V BSZ110N08NS5 TSDSON-8 FL 1 Description (enlarged source interconnection) Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv... See More ⇒

Detailed specifications: BSZ088N03LSG, BSZ088N03MSG, BSZ0909NS, BSZ097N04LSG, BSZ100N03LSG, BSZ100N03MSG, BSZ100N06LS3G, BSZ105N04NSG, K4145, BSZ120P03NS3G, BSZ120P03NS3EG, BSZ123N08NS3G, BSZ12DN20NS3G, BSZ130N03LSG, BSZ130N03MSG, BSZ160N10NS3G, BSZ165N04NSG

Keywords - BSZ110N06NS3G MOSFET specs

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