All MOSFET. BSZ110N06NS3G Datasheet

 

BSZ110N06NS3G Datasheet and Replacement


   Type Designator: BSZ110N06NS3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TSDSON8
 

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BSZ110N06NS3G Datasheet (PDF)

 ..1. Size:459K  infineon
 bsz110n06ns3 bsz110n06ns3g.pdf pdf_icon

BSZ110N06NS3G

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 6.1. Size:1359K  infineon
 bsz110n08ns5.pdf pdf_icon

BSZ110N06NS3G

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VBSZ110N08NS5TSDSON-8 FL1 Description(enlarged source interconnection)Features Ideal for high frequency switching and sync. rec. Optimized technology for DC/DC conv

Datasheet: BSZ088N03LSG , BSZ088N03MSG , BSZ0909NS , BSZ097N04LSG , BSZ100N03LSG , BSZ100N03MSG , BSZ100N06LS3G , BSZ105N04NSG , IRFB3607 , BSZ120P03NS3G , BSZ120P03NS3EG , BSZ123N08NS3G , BSZ12DN20NS3G , BSZ130N03LSG , BSZ130N03MSG , BSZ160N10NS3G , BSZ165N04NSG .

History: US5U30

Keywords - BSZ110N06NS3G MOSFET datasheet

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