BSZ160N10NS3G MOSFET Datasheet: N-Ch, 100V, 8A. Full specification with pinout and replacement list

BSZ160N10NS3G Specs and Replacement

Type Designator: BSZ160N10NS3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TSDSON8

BSZ160N10NS3G substitution

- MOSFET ⓘ Cross-Reference Search

BSZ160N10NS3G datasheet

..1. Size:489K 1
bsz160n10ns3g.pdf pdf_icon

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power Transistor BSZ160N10NS3 Data Sheet Rev. 2.1 Final Power Management & Multimarket BSZ160N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Ideal for high frequency switching RDS(on),max 16 mW Optimized technology for DC/DC converters ID... See More ⇒

2.1. Size:489K infineon
bsz160n10ns3.pdf pdf_icon

4.1. Size:452K infineon
bsz160n10n3sg.pdf pdf_icon

%* ! !% #;B 1= &=- >5>?;= #=;0@/? %@99-=D Features 1 D Q #4513I CG9D389>7 1 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC 4 D Q H35>5?B=1... See More ⇒

9.1. Size:572K infineon
bsz16dn25ns3 bsz16dn25ns3g.pdf pdf_icon

Type BSZ16DN25NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 250 V Optimized for dc-dc conversion RDS(on),max 165 mW N-channel, normal level ID 10.9 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒