All MOSFET. APT5024BVFR Datasheet

 

APT5024BVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT5024BVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247

 APT5024BVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT5024BVFR Datasheet (PDF)

 ..1. Size:61K  apt
 apt5024bvfr.pdf

APT5024BVFR APT5024BVFR

APT5024BVFR500V 22A 0.240POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:375K  inchange semiconductor
 apt5024bvfr.pdf

APT5024BVFR APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BVFRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 5.1. Size:59K  apt
 apt5024bvr.pdf

APT5024BVFR APT5024BVFR

APT5024BVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.2. Size:375K  inchange semiconductor
 apt5024bvr.pdf

APT5024BVFR APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BVRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 6.1. Size:71K  apt
 apt5024bfll.pdf

APT5024BVFR APT5024BVFR

APT5024BFLLAPT5024SFLL500V 22A 0.240WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

 6.2. Size:170K  apt
 apt5024bll apt5024sll.pdf

APT5024BVFR APT5024BVFR

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

 6.3. Size:162K  apt
 apt5024bllg.pdf

APT5024BVFR APT5024BVFR

APT5024BLLAPT5024SLL500V 22A 0.240RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

 6.4. Size:375K  inchange semiconductor
 apt5024bfll.pdf

APT5024BVFR APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BFLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 6.5. Size:375K  inchange semiconductor
 apt5024bll.pdf

APT5024BVFR APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BLLFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT5019HVR , APT5020BN , APT5020BVFR , APT5020BVR , APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , 4435 , APT5024BVR , APT5025BN , APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR .

 

 
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