All MOSFET. APT5024BVFR Datasheet

 

APT5024BVFR Datasheet and Replacement


   Type Designator: APT5024BVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO247
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APT5024BVFR Datasheet (PDF)

 ..1. Size:61K  apt
apt5024bvfr.pdf pdf_icon

APT5024BVFR

APT5024BVFR500V 22A 0.240POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:375K  inchange semiconductor
apt5024bvfr.pdf pdf_icon

APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BVFRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 5.1. Size:59K  apt
apt5024bvr.pdf pdf_icon

APT5024BVFR

APT5024BVR500V 22A 0.240POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

 5.2. Size:375K  inchange semiconductor
apt5024bvr.pdf pdf_icon

APT5024BVFR

isc N-Channel MOSFET Transistor APT5024BVRFEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.24(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: APT5019HVR , APT5020BN , APT5020BVFR , APT5020BVR , APT5020SVFR , APT5020SVR , APT5022AVR , APT5024AVR , IRFB3607 , APT5024BVR , APT5025BN , APT5026HVR , APT5028BVR , APT5028SVR , APT5030AVR , APT5032CVR , APT5040CNR .

History: FQI7N60 | DMNH10H028SCT | IRLS4030 | NTLJS3113P | NTMFS4841N | BFD71 | WML11N80M3

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