All MOSFET. BSZ180P03NS3EG Datasheet

 

BSZ180P03NS3EG MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSZ180P03NS3EG
   Marking Code: 180P3NE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 744 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TSDSON8

 BSZ180P03NS3EG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSZ180P03NS3EG Datasheet (PDF)

 ..1. Size:619K  infineon
 bsz180p03ns3eg.pdf

BSZ180P03NS3EG BSZ180P03NS3EG

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 2.1. Size:632K  infineon
 bsz180p03ns3g bsz180p03ns3g 21.pdf

BSZ180P03NS3EG BSZ180P03NS3EG

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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