BSZ22DN20NS3G Datasheet and Replacement
Type Designator: BSZ22DN20NS3G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: TSDSON8
BSZ22DN20NS3G substitution
BSZ22DN20NS3G Datasheet (PDF)
bsz22dn20ns3 bsz22dn20ns3g.pdf

TypeBSZ22DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 225mW N-channel, normal levelID 7 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TSDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for
Datasheet: BSZ12DN20NS3G , BSZ130N03LSG , BSZ130N03MSG , BSZ160N10NS3G , BSZ165N04NSG , BSZ16DN25NS3G , BSZ180P03NS3G , BSZ180P03NS3EG , 20N50 , BSZ240N12NS3G , BSZ340N08NS3G , BSZ42DN25NS3G , BSZ440N10NS3G , BSZ520N15NS3G , BSZ900N15NS3G , BSZ900N20NS3G , BUZ30AH .
History: AP4002T | FDFMA2P859T | P0550ATF
Keywords - BSZ22DN20NS3G MOSFET datasheet
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History: AP4002T | FDFMA2P859T | P0550ATF



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