IPA030N10N3G Datasheet and Replacement

IPA030N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 3 mW Excellent gate charge x R product (FOM)DS(on)ID 79 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen

isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3FEATURESLow drain-source on-resistance:RDS(on) 3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli

pe # ! ! TM #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35

# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 7 DQ H35

Type IPA032N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.2 mW Optimized technology for DC/DC convertersID 84 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com

isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3FEATURESLow drain-source on-resistance:RDS(on) 3.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA032N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING