IPA030N10N3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA030N10N3G
Marking Code: 030N10N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 41
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 79
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 155
nC
trⓘ - Rise Time: 38
nS
Cossⓘ -
Output Capacitance: 1940
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003
Ohm
Package:
TO220FP
IPA030N10N3G
Datasheet (PDF)
..1. Size:335K infineon
ipa030n10n3g.pdf 
IPA030N10N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max 3 mW Excellent gate charge x R product (FOM)DS(on)ID 79 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for high-frequen
3.1. Size:255K inchange semiconductor
ipa030n10n3.pdf
isc N-Channel MOSFET Transistor IPA030N10N3,IIPA030N10N3FEATURESLow drain-source on-resistance:RDS(on) 3m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
9.1. Size:393K infineon
ipa037n08n3g.pdf
IPA037N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.7 mW Optimized technology for DC/DC convertersID 75 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compli
9.2. Size:542K infineon
ipa032n06n3 rev20.pdf
pe # ! ! TM #:A03 B53 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 4 DQ H35
9.3. Size:536K infineon
ipa037n08n3.pdf
# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BC 7 DQ H35
9.4. Size:332K infineon
ipa032n06n3g.pdf
Type IPA032N06N3 GOptiMOSTM3 Power-TransistorProduct Summary FeaturesVDS 60 V Ideal for high frequency switching and sync. rec.RDS(on),max 3.2 mW Optimized technology for DC/DC convertersID 84 A Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS com
9.5. Size:256K inchange semiconductor
ipa037n08n3.pdf
isc N-Channel MOSFET Transistor IPA037N08N3,IIPA037N08N3FEATURESLow drain-source on-resistance:RDS(on) 3.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM
9.6. Size:201K inchange semiconductor
ipa032n06n3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA032N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
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