IPA057N06N3G Specs and Replacement
Type Designator: IPA057N06N3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 1100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO220FP
IPA057N06N3G substitution
- MOSFET ⓘ Cross-Reference Search
IPA057N06N3G datasheet
ipa057n06n3g ipa057n06n3 rev20.pdf
pe # ! ! # A03 B53 7 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC D Q H35>5?B=1... See More ⇒
ipa057n06n3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA057N06N3 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
ipa057n08n3g.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 80V OptiMOS 3 Power-Transistor IPA057N08N3 G Data Sheet Rev. 2.2 Final Power Management & Multimarket IPA057N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching and sync. rec. RDS(on),max 5.7 mW Optimized technology for DC/DC... See More ⇒
ipa057n08n3.pdf
# ! ! (TM) # A03 B53 7 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC D Q H35>5?B=1... See More ⇒
Detailed specifications: BUZ73AH, BUZ73ALH, BUZ73LH, IPA028N08N3G, IPA030N10N3G, IPA032N06N3G, IPA037N08N3G, IPA045N10N3G, AO3400A, IPA057N08N3G, IPA075N15N3G, IPA086N10N3G, IPA093N06N3G, IPA100N08N3G, IPA105N15N3G, IPA126N10N3G, IPA180N10N3G
Keywords - IPA057N06N3G MOSFET specs
IPA057N06N3G cross reference
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