IPA057N06N3G - Даташиты. Аналоги. Основные параметры

pe # ! ! #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35>5?B=1

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA057N06N3FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 80VOptiMOS3 Power-TransistorIPA057N08N3 GData SheetRev. 2.2FinalPower Management & MultimarketIPA057N08N3 GOptiMOS(TM)3 Power-TransistorProduct Summary FeaturesVDS 80 V Ideal for high frequency switching and sync. rec.RDS(on),max 5.7 mW Optimized technology for DC/DC

# ! ! (TM) #:A03 B53 7 m D n) m xQ ( @D9=9J54 D538>?F5BD5BCDQ H35>5?B=1

isc N-Channel MOSFET Transistor IPA057N08N3,IIPA057N08N3FEATURESLow drain-source on-resistance:RDS(on) 5.7m (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDevice for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY