IPA086N10N3G PDF and Equivalents Search

 

IPA086N10N3G Specs and Replacement

Type Designator: IPA086N10N3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 523 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm

Package: TO220FP

IPA086N10N3G substitution

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IPA086N10N3G datasheet

 ..1. Size:529K  infineon
ipa086n10n3g.pdf pdf_icon

IPA086N10N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power-Transistor IPA086N10N3 G Data Sheet Rev. 2.4 Final Power Management & Multimarket IPA086N10N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 8.6 mW Excellent gate charge x R product (FOM) DS(on) ID 45 A... See More ⇒

 3.1. Size:256K  inchange semiconductor
ipa086n10n3.pdf pdf_icon

IPA086N10N3G

isc N-Channel MOSFET Transistor IPA086N10N3,IIPA086N10N3 FEATURES Low drain-source on-resistance RDS(on) 4.5m (max) Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒

 9.1. Size:1811K  infineon
ipa083n10n5.pdf pdf_icon

IPA086N10N3G

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPA083N10N5 TO-220-FP 1 Description Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resista... See More ⇒

 9.2. Size:1057K  infineon
ipa083n10nm5s.pdf pdf_icon

IPA086N10N3G

IPA083N10NM5S MOSFET PG-TO 220 FP OptiMOSTM 5 Power-Transistor, 100 V Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product validation Qualified... See More ⇒

Detailed specifications: IPA028N08N3G, IPA030N10N3G, IPA032N06N3G, IPA037N08N3G, IPA045N10N3G, IPA057N06N3G, IPA057N08N3G, IPA075N15N3G, IRF1405, IPA093N06N3G, IPA100N08N3G, IPA105N15N3G, IPA126N10N3G, IPA180N10N3G, IPA50R140CP, IPA50R199CP, IPA50R250CP

Keywords - IPA086N10N3G MOSFET specs

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