IPA50R140CP Datasheet and Replacement
Type Designator: IPA50R140CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO220FP
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IPA50R140CP Datasheet (PDF)
ipa50r140cp.pdf

IPA50R140CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 W 4EHB:M?:; 8;IJ / ?D 1, DS(on)R 0.140 DS(on) maxW )EM;IJ
ipa50r140cp.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R140CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r190ce ipp50r190ce ipw50r190ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s
ipa50r199cp.pdf

IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: CS12N60FA9H | IRFSL7534PBF | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003
Keywords - IPA50R140CP MOSFET datasheet
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History: CS12N60FA9H | IRFSL7534PBF | FQU13N10 | SFB053N100C3 | NTMFS4837NHT1G | SWMI4N65D | BMS3003



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