IPA50R399CP Datasheet and Replacement
Type Designator: IPA50R399CP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm
Package: TO220FP
IPA50R399CP substitution
IPA50R399CP Datasheet (PDF)
ipa50r399cp.pdf

IPA50R399CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 0) 1, #JAA - (V . J6Ai;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r399cp.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R399CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r350cp.pdf

IPA50R350CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M ., + g 0. 50 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI 1, #JAA - (0)V . J6iified 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r380ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S
Datasheet: IPA126N10N3G , IPA180N10N3G , IPA50R140CP , IPA50R199CP , IPA50R250CP , IPA50R299CP , IPA50R350CP , IPA50R380CE , 2N7002 , IPA50R520CP , IPA60R099C6 , IPA60R125C6 , IPA60R125CP , IPA60R160C6 , IPA60R165CP , IPA60R190C6 , IPA60R190E6 .
History: 2SK3352K
Keywords - IPA50R399CP MOSFET datasheet
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History: 2SK3352K



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