IPA50R520CP MOSFET. Datasheet pdf. Equivalent
Type Designator: IPA50R520CP
Marking Code: 5R520P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 30 W
Maximum Drain-Source Voltage |Vds|: 500 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 7.1 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 13 nC
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 31 pF
Maximum Drain-Source On-State Resistance (Rds): 0.52 Ohm
Package: TO220FP
IPA50R520CP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPA50R520CP Datasheet (PDF)
ipa50r520cp.pdf
TypeIPA50R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DPackage @Tjmax 550 V"1 W *EM;IJ
ipa50r520cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r500ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R500CEData SheetRev. 2.0FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R500CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r500ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R500CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r950ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R950CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R950CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R190CEData SheetRev. 2.0FinalIndustrial & Multimarket500V CoolMOS CE Power TransistorIPW50R190CE, IPP50R190CE, IPA50R190CETO-247 TO-220 TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the s
ipa50r650ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R650CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R650CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r140cp.pdf
IPA50R140CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 W 4EHB:M?:; 8;IJ / ?D 1, DS(on)R 0.140 DS(on) maxW )EM;IJ
ipa50r350cp.pdf
IPA50R350CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M ., + g 0. 50 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI 1, #JAA - (0)V . J6iified 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r399cp.pdf
IPA50R399CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 0) 1, #JAA - (V . J6Ai;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r800ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R800CEData SheetRev. 2.1FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R800CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r199cp.pdf
IPA50R199CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V!0W)EM;IJ
ipa50r280ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPA50R280CEData SheetRev. 2.2FinalPower Management & Multimarket500V CoolMOS CE Power TransistorIPA50R280CETO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa50r190ce.pdf
IPA50R190CEMOSFETPG-TO 220 FP500V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting h
ipa50r299cp.pdf
IPA50R299CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @Tjmax 550 V!0 V )DL:HI ;>I / M . C6CI 1, #-0)V . J6>A;>:9 688DG9>C 01>53:10 2;=V %6G9 6C9 HD;IHL>I8=>C
ipa50r250cp.pdf
IPA50R250CPCIMOSTM$;B1='=-:>5>?;=$=;0@/?&@99-=DFeatures @Tjmax 550 V"1X*FNLI
ipa50r380ce.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S
ipa50r950ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R950CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r650ce.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA50R650CEFEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
ipa50r140cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R140CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r350cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R350CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r399cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R399CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r800ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R800CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r199cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R199CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r280ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R280CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r190ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R190CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r299cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R299CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r250cp.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R250CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
ipa50r380ce.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA50R380CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .