IPA50R520CP Specs and Replacement
Type Designator: IPA50R520CP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ -
Output Capacitance: 31 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: TO220FP
- MOSFET ⓘ Cross-Reference Search
IPA50R520CP datasheet
..1. Size:546K infineon
ipa50r520cp.pdf 
Type IPA50R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Package @Tjmax 550 V "1 W *EM;IJ ... See More ⇒
..2. Size:200K inchange semiconductor
ipa50r520cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R520CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
7.1. Size:1327K infineon
ipa50r500ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R500CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R500CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
7.2. Size:201K inchange semiconductor
ipa50r500ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R500CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.1. Size:1347K infineon
ipa50r950ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R950CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
8.2. Size:2210K infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s... See More ⇒
8.3. Size:1342K infineon
ipa50r650ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R650CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R650CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
8.4. Size:604K infineon
ipa50r140cp.pdf 
IPA50R140CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 550 V !0 W 4EHB M? ; 8;IJ / ?D 1, DS(on) R 0.140 DS(on) max W )EM;IJ ... See More ⇒
8.5. Size:578K infineon
ipa50r350cp.pdf 
IPA50R350CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . , + g 0. 50 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI 1, #JAA - ( 0) V . J6iified 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C... See More ⇒
8.6. Size:561K infineon
ipa50r399cp.pdf 
IPA50R399CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 0) 1, #JAA - ( V . J6Ai;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C... See More ⇒
8.7. Size:1351K infineon
ipa50r800ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R800CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R800CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
8.9. Size:1356K infineon
ipa50r280ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R280CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R280CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p... See More ⇒
8.10. Size:971K infineon
ipa50r190ce.pdf 
IPA50R190CE MOSFET PG-TO 220 FP 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h... See More ⇒
8.11. Size:552K infineon
ipa50r299cp.pdf 
IPA50R299CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 1, #- 0) V . J6>A;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C... See More ⇒
8.13. Size:2917K infineon
ipa50r380ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S... See More ⇒
8.14. Size:201K inchange semiconductor
ipa50r950ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R950CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.15. Size:201K inchange semiconductor
ipa50r650ce.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA50R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA... See More ⇒
8.16. Size:200K inchange semiconductor
ipa50r140cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R140CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.17. Size:200K inchange semiconductor
ipa50r350cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R350CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.18. Size:201K inchange semiconductor
ipa50r399cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R399CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.19. Size:201K inchange semiconductor
ipa50r800ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R800CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.20. Size:201K inchange semiconductor
ipa50r199cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R199CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.21. Size:201K inchange semiconductor
ipa50r280ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R280CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.22. Size:201K inchange semiconductor
ipa50r190ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R190CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.23. Size:201K inchange semiconductor
ipa50r299cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R299CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.24. Size:201K inchange semiconductor
ipa50r250cp.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R250CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
8.25. Size:201K inchange semiconductor
ipa50r380ce.pdf 
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R380CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING... See More ⇒
Detailed specifications: IPA180N10N3G, IPA50R140CP, IPA50R199CP, IPA50R250CP, IPA50R299CP, IPA50R350CP, IPA50R380CE, IPA50R399CP, AOD4184A, IPA60R099C6, IPA60R125C6, IPA60R125CP, IPA60R160C6, IPA60R165CP, IPA60R190C6, IPA60R190E6, IPA60R199CP
Keywords - IPA50R520CP MOSFET specs
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