IPA50R520CP - описание и поиск аналогов

Type IPA50R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Package @Tjmax 550 V "1 W *EM;IJ

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R520CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R500CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R500CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R500CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R950CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R650CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R650CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

IPA50R140CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 550 V !0 W 4EHB M? ; 8;IJ / ?D 1, DS(on) R 0.140 DS(on) max W )EM;IJ

IPA50R350CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . , + g 0. 50 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI 1, #JAA - ( 0) V . J6iified 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

IPA50R399CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 0) 1, #JAA - ( V . J6Ai;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R800CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R800CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R280CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R280CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p

IPA50R190CE MOSFET PG-TO 220 FP 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h

IPA50R299CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 1, #- 0) V . J6>A;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R950CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA50R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R140CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R350CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R399CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R800CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R199CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R280CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R190CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R299CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R250CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R380CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING