IPA60R380C6 Datasheet and Replacement
Type Designator: IPA60R380C6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 46 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220FP
IPA60R380C6 substitution
IPA60R380C6 Datasheet (PDF)
ipd60r380c6 ipi60r380c6 ipb60r380c6 ipp60r380c6 ipa60r380c6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according
ipa60r380c6.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R380C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte
ipa60r380e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an
Datasheet: IPA60R165CP , IPA60R190C6 , IPA60R190E6 , IPA60R199CP , IPA60R250CP , IPA60R280C6 , IPA60R280E6 , IPA60R299CP , 50N06 , IPA60R380E6 , IPA60R385CP , IPA60R450E6 , IPA60R520C6 , IPA60R520CP , IPA60R520E6 , IPA60R600C6 , IPA60R600CP .
History: IRFSL3107PBF | AON6206
Keywords - IPA60R380C6 MOSFET datasheet
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History: IRFSL3107PBF | AON6206



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