IPA65R280E6 Datasheet and Replacement
Type Designator: IPA65R280E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220FP
IPA65R280E6 substitution
IPA65R280E6 Datasheet (PDF)
ipa65r280e6.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R280E6FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
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Datasheet: IPA60R520CP , IPA60R520E6 , IPA60R600C6 , IPA60R600CP , IPA60R600E6 , IPA60R750E6 , IPA60R950C6 , IPA65R280C6 , P55NF06 , IPA65R380C6 , IPA65R380E6 , IPA65R600C6 , IPA65R600E6 , IPA65R660CFD , IPA90R1K0C3 , IPA90R1K2C3 , IPA90R340C3 .
History: HM30N10D
Keywords - IPA65R280E6 MOSFET datasheet
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History: HM30N10D
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