IPA65R280E6 PDF and Equivalents Search

 

IPA65R280E6 Specs and Replacement

Type Designator: IPA65R280E6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220FP

IPA65R280E6 substitution

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IPA65R280E6 datasheet

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IPA65R280E6

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IPA65R280E6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA65R280E6 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒

 5.1. Size:1337K  infineon
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IPA65R280E6

MO Met l Oxi e emi n t iel e t n i t C lMO C6 65 C lMO C6 e n i t I x65 280C6 D t eet Rev. 2.1 in l e M n ement & M ltim ket , == $&)G '=D3? *?/... See More ⇒

 5.2. Size:2104K  infineon
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IPA65R280E6

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Detailed specifications: IPA60R520CP, IPA60R520E6, IPA60R600C6, IPA60R600CP, IPA60R600E6, IPA60R750E6, IPA60R950C6, IPA65R280C6, AON6414A, IPA65R380C6, IPA65R380E6, IPA65R600C6, IPA65R600E6, IPA65R660CFD, IPA90R1K0C3, IPA90R1K2C3, IPA90R340C3

Keywords - IPA65R280E6 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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